dm n 1002 u c a 6 document number: ds 39839 rev. 2 - 2 1 of 7 www.diodes.com october 2017 ? diodes incorporated dm n 1002 u c a 6 n - channel enhancement mode mosfet product summary bv s ss r s s(on) max i s t a = +25c 12 v 2.75 m? @ v gs = 4 .5v 24.4a 6.1 m? @ v gs = 2.5 v 16.4a description this new generation mosfet is designed to minimize the on - state resistance (r s s ( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? battery management ? load switch ? battery protection features ? csp with footprint 3.05 mm 1 . 77 mm ? height = 0. 1 1 mm for low profile ? esd protection of gate ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) mechanical data ? case: x4 - dsn 31 18 - 6 ? terminal connections: see diagram below ? moisture sensitivity: level 1 per j - std - 020 ? terminal s: finish nipdau. solderable per mil - std - 202, method 208 ordering information (note 4 ) part number case packaging dm n 1002 u c a 6 - 7 x4 - dsn 31 18 - 6 3000/tape & reel notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <9 00ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes - packaging/ . marking information date code key year 201 5 201 6 201 7 201 8 201 9 20 20 20 21 code c d e f g h i month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d x4 - dsn 31 1 8 - 6 top view m5 = product type marking code ym = date code marking y or y = year (ex: e = 201 7 ) m or m = month (ex: 9 = september) equivalent circuit 1. source 1 2. gate 1 3. source 1 4. source 2 5. gate 2 6. source 2 esd protected s1 g1 s2 g2 e4
dm n 1002 u c a 6 document number: ds 39839 rev. 2 - 2 2 of 7 www.diodes.com october 2017 ? diodes incorporated dm n 1002 u c a 6 maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit source - source voltage v s ss 12 v gate - source voltage v gss 8 v continuous source current (note 5 ) v gs = 4.5v steady state t a = + 25c t a = + 70 c i s 24.4 19.6 a continuous source current (note 5 ) v gs = 2.5v steady state t a = + 25c t a = + 70 c i s 16.4 13.1 a pulsed source current (note 6 ) i sm 100 a thermal characteristics characteristic symbol value unit power dissipation (note 7 ) p d 1.10 w thermal resistance, junction to ambient @t a = + 25c (note 7 ) r j a 114.1 c/w power dissipation (note 5 ) p d 2.47 w thermal resistance, junction to ambient @t a = + 25c (note 5 ) r ja 50.7 c/w operating and storage temperature range t j , t stg - 55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) source - source breakdown voltage bv s ss 12 gs = 0v, i s = 1ma zero gate voltage drain current t j = + 25c i s ss s s = 9.6 v , v gs = 0v gate - source leakage i gss ? gs = 8 v, v ss = 0v ? gs = 5 v, v ss = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) 0. 3 5 0.8 1. 4 v v s s = 10 v , i s = 1 .41 ma static source - source on - resistance r s s (on) ? gs = 4 .5v, i s = 6 a gs = 3.8 v, i s = 6 a gs = 3.1 v, i s = 6 a gs = 2 . 5 v, i s = 6 a diode forward voltage v s s gs = 0v, i s = 6 a dynamic characteristics (note 9 ) input capacitance c iss s s = 10 v, v gs = 0v , f = 1 k hz output capacitance c oss 1137 reverse transfer capacitance c rss 297 total gate charge q g 68.6 nc v ss = 8 v, v gs = 4 v, i s = 6 a gate - source charge q gs 12.5 gate - drain charge q gd 24.0 gate charge at v th q g (th) 6.8 turn - on delay time t d( on ) 1508 ns v ss = 8 v, v gs = 4 v, i s = 6 a turn - on rise time t r 3279 turn - off delay time t d( off ) 3965 turn - off fall time t f 6290 notes: 5 . device mounted on fr - 4 material with 1 - inch 2 (6.45 - cm 2 ), 2 - oz. (0.071 - mm thick) cu . 6 . repetitive rating, pulse width limited by junction temperature. 7. device mounted on fr - 4 pcb with minimum recommended pad layout, single sided. 8 . short duration pulse test used to minimize self - heating effect . 9 . guaranteed by design. not subject to production testing.
dm n 1002 u c a 6 document number: ds 39839 rev. 2 - 2 3 of 7 www.diodes.com october 2017 ? diodes incorporated dm n 1002 u c a 6 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.4 0.8 1.2 1.6 2 i s , source - source current (a) v ss , source - source voltage (v) fig ure 1. typical output characteristic v gs = 1.2v v gs = 1.3v v gs = 1.4v v gs = 4.5v v gs = 3.0v v gs = 8.0v v gs = 1.5v v gs = 2.0v 0.001 0.0015 0.002 0.0025 0.003 0.0035 0.004 0 5 10 15 20 25 30 r ss(on) , source - source on - resistance ( ? s , source - source current (a) figure 3. typical on - resistance vs . source current and gate voltage v gs = 4.5v v gs = 3.8v v gs = 2.5v 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0 1 2 3 4 5 6 7 8 r ss(on) , source - source on - resistance ( ? gs , gate - source voltage (v) figure 4. typical transfer characteristic i s = 6.0a 0.001 0.0015 0.002 0.0025 0.003 0.0035 0.004 0 5 10 15 20 25 30 r ss(on) , source - source on - resistance ( ? s , source - source current (a) figure 5. typical on - resistance vs. source current and junction temperature t j = - 55 t j = 25 t j = 85 t j = 150 t j = 125 v gs = 4.5v 0.6 0.8 1 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 r ss(on) , source - source on - resistance ( ? j , junction temperature ( gs = 2.5v, i s = 6.0a v gs = 3.8v, i s = 6.0a v gs = 4.5v, i s = 6.0a 0 5 10 15 20 25 30 0.6 0.8 1 1.2 1.4 1.6 1.8 i s , source - source current ( a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ss = 5v t j = - 55 t j = 25 t j = 85 t j = 125 t j = 150
dm n 1002 u c a 6 document number: ds 39839 rev. 2 - 2 4 of 7 www.diodes.com october 2017 ? diodes incorporated dm n 1002 u c a 6 0.001 0.002 0.003 0.004 0.005 - 50 - 25 0 25 50 75 100 125 150 r ss(on) , source - source on - resistance ( ? j , junction temperature ( gs = 4.5v, i s = 6.0a v gs = 2.5v, i s = 6.0a v gs = 3.8v, i s = 6.0a 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 i s , source - source current (a) v fss , source - source voltage (v) figure 9. diode forward voltage vs. current t j = 125 o c t j = 85 o c t j = 25 o c t j = - 55 o c v gs = 0v t j = 150 o c 100 1000 10000 0 2 4 6 8 10 12 c t , junction capacitance (pf) v s s , source - source voltage (v) figure 10. typical junction capacitance f = 1mhz c rss c oss c iss 0 1 2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80 90 v gs (v) q g (nc) figure 11. gate charge v ss = 8.0v, i s = 6.0a 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i s , source current (a) v ss , source - source voltage (v) figure 12. soa, safe operation area p w = 100ms p w = 100 s p w = 1s r ds(on) limited p w = 1ms t j(max) = 150 t c = 25 single pulse dut on 1*mrp board v gs = 4.5v p w = 10ms p w = 10s dc 0.2 0.4 0.6 0.8 1 1.2 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( s = 250 a i s = 1ma
dm n 1002 u c a 6 document number: ds 39839 rev. 2 - 2 5 of 7 www.diodes.com october 2017 ? diodes incorporated dm n 1002 u c a 6 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.9 d=0.7 r ja (t) = r(t) * r ja r ja = 115 /w duty cycle, d = t1 / t2
dm n 1002 u c a 6 document number: ds 39839 rev. 2 - 2 6 of 7 www.diodes.com october 2017 ? diodes incorporated dm n 1002 u c a 6 package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. x4 - dsn3118 - 6 suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. x4 - dsn3118 - 6 x4 - dsn3118 - 6 dim min max typ a 0.09 0.16 0.11 b -- -- 0.25 b2 0.32 0.38 0.35 d 3.00 3.10 3.05 e 1.72 1.82 1.77 e -- -- 0.800 e2 -- -- 0.878 k -- -- 0.648 k1 -- -- 0.485 l 0.975 1.035 1.005 all dimensions in mm dimensions value (in mm) c 0.800 c1 0.878 d 0.250 x 1.005 y 0.350 y c1 c ? d x c1 d e2 r0.175 e e a ? b(2x ) e2 l b2 k1 k
dm n 1002 u c a 6 document number: ds 39839 rev. 2 - 2 7 of 7 www.diodes.com october 2017 ? diodes incorporated dm n 1002 u c a 6 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products d escribed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated doe s not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnif y and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicati on. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this docum ent is written in english but may be translated into multiple languages for reference. only the english version of this docum ent is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specific ally not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems w hich: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. custom ers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements c oncerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, cust omers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 7 , diodes incorporated www.diodes.c om
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